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Publications

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  1. M. Sancrotti; L. Duò; L. Calliari; F. Manghi; R. Cosso; P. Weightman,
    Anion-specific surface valence band-states in heteropolar semiconductors: the case of GaP(110) and InP(110),
    in «PHYSICAL REVIEW. B, CONDENSED MATTER»,
    vol. 46,
    , pp. 13607 -
    13610
  2. M. Bonelli; L. A. Guzman; A. Miotello; L. Calliari; M. Elena; P. M. Ossi,
    Structure and optical properties of TiN films prepared by dc sputtering and by ion beam assisted deposition,
    in «VACUUM»,
    vol. 43,
    , pp. 459 -
    462
  3. L. Calliari; F. Marchetti,
    Electron irradiation of silicon dioxide: a non-destructive measurement of the in-depth induced compositional changes,
    in «APPLIED SURFACE SCIENCE»,
    vol. 59,
    , pp. 79 -
    85
  4. L. Calliari; F. Marchetti; M. Sancrotti; L. Duò; R. Cosso; P. Weightman; F. Manghi,
    Surface local density of states of InP(110) via P L2,3VV Auger line-shape: the role of an ordered (1x1) Sb overlayer,
    in «APPLIED SURFACE SCIENCE»,
    vol. 56-58,
    , pp. 60 -
    65
  5. M. Sancrotti; L. Duò; L. Calliari; F. Marchetti; R. Cosso; P. Weightman; F. Manghi,
    Quenching the surface electronic structure of P-containing III-V semiconductors via ordered (1x1) Sb overlayers: a P L2,3VV Auger line-shape analysis,
    in «SURFACE SCIENCE»,
    vol. 269/270,
    , pp. 838 -
    843
  6. Maurizio Dapor,
    Theory of the interaction between an electron beam and a thin solid film,
    in «SURFACE SCIENCE»,
    vol. 269/270,
    , pp. 753 -
    762
  7. Maurizio Dapor,
    Monte Carlo simulation of backscattered electrons and energy from thick targets and surface films,
    in «PHYSICAL REVIEW. B, CONDENSED MATTER»,
    vol. 46,
    , pp. 618 -
    625
  8. Y. Massiani; P. Gravier; J. Crousier; Lorenzo Fedrizzi; Maurizio Dapor; Victor Micheli; L. Roux,
    Effects of ion beam implantation on the corrosion behaviour of TiN-coated Ti-6Al-4V alloy,
    in «SURFACE & COATINGS TECHNOLOGY»,
    vol. 52,
    , pp. 159 -
    167
  9. Maurizio Dapor; Guido Cicolini; Flavio Giacomozzi; Maurizio Boscardin; G. Queirolo,
    Seeman-Bohlin x-ray diffraction study of Al-1%Si thin films used in ULSI devices,
    in «MATERIALS LETTERS»,
    vol. 13,
    , pp. 142 -
    146
  10. Diego Bisero; Maurizio Dapor; Benno Margesin,
    X-ray diffraction study of P-doped polycrystalline Si thin films used in ULSI devices,
    in «MATERIALS LETTERS»,
    vol. 14,
    , pp. 303 -
    306