You are here

Publications

Primary tabs

  1. Maurizio Dapor,
    Monte Carlo simulation of backscattered electrons and energy from thick targets and surface films,
    in «PHYSICAL REVIEW. B, CONDENSED MATTER»,
    vol. 46,
    , pp. 618 -
    625
  2. Y. Massiani; P. Gravier; J. Crousier; Lorenzo Fedrizzi; Maurizio Dapor; Victor Micheli; L. Roux,
    Effects of ion beam implantation on the corrosion behaviour of TiN-coated Ti-6Al-4V alloy,
    in «SURFACE & COATINGS TECHNOLOGY»,
    vol. 52,
    , pp. 159 -
    167
  3. Maurizio Dapor; Guido Cicolini; Flavio Giacomozzi; Maurizio Boscardin; G. Queirolo,
    Seeman-Bohlin x-ray diffraction study of Al-1%Si thin films used in ULSI devices,
    in «MATERIALS LETTERS»,
    vol. 13,
    , pp. 142 -
    146
  4. Diego Bisero; Maurizio Dapor; Benno Margesin,
    X-ray diffraction study of P-doped polycrystalline Si thin films used in ULSI devices,
    in «MATERIALS LETTERS»,
    vol. 14,
    , pp. 303 -
    306
  5. G. F., Cerofolini; L., Meda; R., Balboni; F., Corni; S., Frabboni; G., Ottaviani; Rita, Tonini; Anderle, Mariano; Canteri, Roberto,
    Hydrogen- related complexes as the Stressing Species in High-Fluence, Hydrogen-Implanted, Single Crystal Silicon,
    in «PHYSICAL REVIEW. B, CONDENSED MATTER»,
    vol. 46,
    n. 4,
    , pp. 2061 -
    2070
  6. A. Molinari; G. Straffelini; V. Fontanari; Roberto Canteri,
    Sintering and Microstructure of Phosphorus Steels,
    in «POWDER METALLURGY»,
    vol. 35,
    n. 4,
    , pp. 285 -
    292
  7. S.P. Jeng; T. Ma; Mariano Anderle; Gary Wayne Rubloff; Roberto Canteri,
    Anomalous Diffusion of Fluorine in Silicon,
    in «APPLIED PHYSICS LETTERS»,
    vol. 61,
    n. 11,
    , pp. 1310 -
    1312
  8. L. Moro; Roberto Canteri; Mariano Anderle,
    Sputtered Neutral and Molecular Ion Mass Spectrometries in the Characterization of Multilayer Samples,
    in «SURFACE AND INTERFACE ANALYSIS»,
    vol. 18,
    , pp. 765 -
    772
  9. R. Angelucci; M. Impronta; G. Pizzocchero; A. Poggi; Sandro Solmi; Roberto Canteri,
    Shallow Junction Formation Using MoSi2 as Diffusion Source,
    in «MICROELECTRONIC ENGINEERING»,
    vol. 19,
    , pp. 673 -
    678
  10. L. Moro; Roberto Canteri; A. Anderle,
    Sputtered netural and molecular ion mass spectrometries in the characterization of multilayer samples,
    in «SURFACE AND INTERFACE ANALYSIS»,
    vol. 18,
    n. 11,
    , pp. 765 -
    772